Presented at SPIE Advanced Lithography 2009

The introduction of immersion lithography has brought with it new requirements for understanding defectivity in areas of the wafer that are less important for dry lithography processes. Defects originating in non-exposure areas, including streets, partial devices and the edge of the wafer all have the potential to create problems within the immersion environment. Edge related problems in particular need to be monitored closely for both EBR process control and defectivity.