Edge Exclusion Defect Inspection
This inspection process focuses on the area near the wafer edge, an area that poses difficulty for traditional frontside inspection technology due to its varied topography and process variation. This inspection step is implemented during ADI, post-etch, post-clean and post-CMP.

Typical defects include:

• Peeling films
• Residual slurry or photoresist
• Cleaning contaminants
• Residual films
• Surface and embedded defects

Edge Bevel Inspection (Edge Normal)
This inspection focuses on the side edge of a wafer to determine if it has any chips, cracks, contamination or layering delamination. This process identifies wafers that have a risk of breaking, and catches them early to prevent them from breaking at a point in the process where they might cause contamination for other wafers and equipment. Edge Bevel Inspection can be implemented at any point throughout the wafer manufacturing process.

Typical defects include:

• Chips
• Cracks
• Contamination
• Layering delamination
• Residual slurry or photoresist

Edge Bead Removal (EBR) and Edge Exclusion Metrology
This topside surface measurement is required exclusively in the photolithography process, primarily to determine if wafers have been properly aligned for the creation of the edge exclusion region. Inspection in the photolithography process allows for rework of the resist layer if necessary. This process also verifies that the EBR process worked as intended. EBR metrology measures the distance from the edge of a wafer to the edge of the resist film at multiple points on a wafer. This distance typically varies from 0mm to 6mm from the wafer edge.